The IR/IR are high voltage, high speed power. MOSFET and Please refer to our Application Notes and DesignTips for proper circuit board layout. APPLICATION NOTE. 1. GATE DRIVE REQUIREMENTS OF HIGH-SIDE DEVICES. The gate drive requirements for a power MOSFET or IGBT uti- lized as a high. Design and Application Guide of Bootstrap Circuit for. High-Voltage Gate-Drive IC. Rev. • 12/18/14 1. Introduction. The purpose of.
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Content on this site may contain or be subject to specific guidelines or limitations on use. Use of the information on this site may require a license from a third party, or a license from Infineon. I greatly appreciate any help. But you should test the circuit with a load, as in an SMPS, many unexpected things can happen if there is no load.
If so, is there a rule of thumb saying how big? How are the pulses at PB1 and PB0 arranged?
High voltage half Bridge mosfet problem.
Too high and some FETs will start to turn on only ones wity very low Vth. Saad 2, 6 42 Jun 18, 3. Home Questions Tags Users Unanswered.
For what its worth, by assuming that I can ignore capacitor leakage current and Vmin, I used the above expression and the values I found for a frequency of 50Hz. Saad 2, 6 42 applicayion Am I correct that if I use a ceramic capacitor, this value would be value and therefore can be ignored in the above expression?
Pspice Simulation with IR
Posted by iamhere in forum: Jun 18, 6. The value for 20kHz is 0. V Minthe application note states this is the minimum voltage between the Vb applcation Vs.
Jul 2, Unfortunately, by looking at the suggested schematic see below I’m unable to understand what value should I be using for this. Thank you very much.
I cbs – leakBootstrap cap. I R 2 3 04 switch frequency: I just redid my calculation and the answer turns out to be the same.
Bookmarks Bookmarks Digg del. Jun 30, All postings and use of the content on this site are subject to the Usage Terms of the site; third parties using this content agree to abide by any limitations or guidelines and to comply with the Usage Terms of this site. Unfortunately, by looking at the suggested schematic see below I’m unable to understand what value should I be using for this.
Jul 17, 22, 1, Jun 18, 2.
Is there a disadvantage to using a larger cap? Turn-off delay time is 42nS. Am I correct that if I use a ceramic capacitor, this value would be value and therefore can be ignored in the above expression?
Total gate charge for the IRF is 38nC. Sign up or log in Sign up using Google. Results 1 to 2 of 2. So you can troubleshoot the circuit somehow? Infineon accepts no liability notf the content and materials on this site being accurate, complete or wpplication to-date or for the contents of external links.
Jul 1, If it does then it is not due to cross conduction. If it does then cross conduction is highly likely. Is there a drawback to having a large bootstrap capacitor?